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Si5499DC
Vishay Siliconix
THERMAL RESISTANCE RATINGS
Parameter
Symbol
Typical
Maximum
Unit
Maximum Junction-to-Ambient
a, b
Maximum Junction-to-Foot (Drain)
t ≤ 5s
Steady State
R thJA
R thJF
48
17
50
20
°C/W
Notes:
a. Surface Mounted on 1" x 1" FR4 board.
b. Maximum under Steady State conditions is 95 °C/W.
SPECIFICATIONS T J = 25 °C, unless otherwise noted
Parameter
Symbol
Test Conditions
Min.
Typ.
Max.
Unit
Static
Drain-Source Breakdown Voltage
V DS Temperature Coefficient
V GS(th) Temperature Coefficient
V DS
Δ V DS /T J
Δ V GS(th) /T J
V GS = 0 V, I D = - 250 μA
I D = - 250 μA
-8
6
2.3
V
mV/°C
Gate-Source Threshold Voltage
V GS(th)
V DS = V GS , I D = - 250 μA
V DS = V GS , I D = - 5 mA
- 0.35
- 0.55
- 0.8
V
Gate-Source Leakage
Zero Gate Voltage Drain Current
On-State Drain Current a
I GSS
I DSS
I D(on)
V DS = 0 V, V GS = ± 5 V
V DS = - 8 V, V GS = 0 V
V DS = - 8 V, V GS = 0 V, T J = 55 °C
V DS ≤ 5 V, V GS = - 4.5 V
V GS = - 4.5 V, I D = - 5.1 A
- 25
0.030
± 100
-1
- 10
0.036
nA
μA
A
Drain-Source On-State Resistance a
R DS(on)
V GS = - 2.5 V, I D = - 4.6 A
V GS = - 1.8 V, I D = - 4.3 A
0.037
0.046
0.045
0.056
Ω
V GS = - 1.5 V, I D = - 1.3 A
0.057
0.077
Forward Transconductance a
g fs
V DS = - 4 V, I D = - 5.1 A
18
S
Dynamic
b
Input Capacitance
C iss
1290
Output Capacitance
Reverse Transfer Capacitance
C oss
C rss
V DS = - 4 V, V GS = 0 V, f = 1 MHz
420
270
pF
Total Gate Charge
Gate-Source Charge
Q g
Q gs
V DS = - 4 V, V GS = - 8 V, I D = - 6 A
V DS = - 4 V, V GS = - 4.5 V, I D = - 6 A
23
14
1.7
35
21
nC
Gate-Drain Charge
Q gd
2.7
Gate Resistance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
R g
t d(on)
t r
t d(off)
f = 1 MHz
V DD = - 4 V, R L = 0.7 Ω
I D ? - 5.6 A, V GEN = - 4.5 V, R g = 1 Ω
8
10
70
60
15
110
90
Ω
Fall Time
Turn-On Delay Time
t f
t d(on)
30
8
45
15
ns
Rise Time
Turn-Off Delay Time
Fall Time
t r
t d(off)
t f
V DD = - 4 V, R L = 0.7 Ω
I D ? - 5.6 A, V GEN = - 8 V, R g = 1 Ω
70
55
55
110
85
85
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Document Number: 73321
S-83054-Rev. C, 29-Dec-08
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